MRF5S9070NR1

Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 17.8 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power Features www.DataSheet4U.com Characterized with Series Equivalent Large - Signal Impedance Parameters Integrated ESD Protection 200°C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF5S9070NR1 880 MHz, 70 W, 26 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, + 68 - 0.5, + 15 219 1.25 - 65 to +150 200 Unit Vdc Vdc W W/°...