MRF917T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from RF Marketing The RF Small Signal Line NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand–held phones. Small, Surface–Mount Package (SC–70) High Current Gain–Bandwidth Product (fτ = 6.0 GHz Typ @ 6.0 V, 20 mA) Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz Available in Tape and Reel Packaging. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel www.DataSheet4U.com MRF917T1 LOW NOISE HIGH FREQUENCY TRANSISTOR CASE 419–02, STYLE 3 (SC–70/SOT–323) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 75°C (1) Derate above 75°C Storage Temperature Range Operating Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 12 20 2.0 60 222 3.0 – 55 to +150 150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction–to–Case (1) Symbol RθJC Value 338 Unit °C/W DEVICE MARKING MRF917T1 = K (1) Case temperature measured on the collector lead immediately adjacent to body of package. MOTOROLA RF DEVICE DATA © Motorola, Inc. 1996 MRF917T1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0 mA) Collector–Base Bre...