N-Channel MOSFET
SSM95T07GP
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement Lower On-resistance Fast Sw...
Description
SSM95T07GP
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant
D
BVDSS RDS(ON) ID
75V 5mΩ 80A
G S
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DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial power applications and suited for low voltage applications such as DC/DC converters.
G
D
TO-220(P)
S
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1 3
Rating 75 ±20 80 70 320 300 2
4
Units V V A A A W W/℃ mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
450 -55 to 175 -55 to 175
THERMAL DATA
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.5 62 Units ℃/W ℃/W
07/11/2007 Rev.1.00
www.SiliconStandard.com
1
SSM95T07GP
ELECTRICAL CHARACTERISTICS
(TJ=25 C unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance
Drain-So...
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