SSM95T06GP

SSM95T06GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching G D BV DSS R DS(ON) ID 60V 8.5mΩ 75A S Description The SSM95T06S is in a TO-263 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole www.DataSheet4U.com version, the SSM95T06P in TO-220, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. G G D S TO-263 (S) Pb-free lead finish (second-level interconnect) D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 60 ±20 75 66 260 138 1.11 4 Units V V A A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units °C/W °C/W 2/16/2005 Rev.1.10 www.SiliconStandard.com 1 of 5 SSM95T06GP,S Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter D...