SIM200D12SV3

Preliminary SIM200D12SV3 VCES = 1200V Ic = 200A VCE(ON) typ. = 1.7V @ Ic = 200A “HALF-BRIDGE” IGBT MODULE Features ▪ rench gate + field stopper, using Infineon chip design ▪ 10µs Short circuit capability ▪ Low turn-off losses ▪ Short tail current for over 18KHz ▪ Positive VCE(on) temperature coefficient www.DataSheet4U.com Applications ▪ AC & DC Motor controls ▪ VVVF inverters ▪ Optimized for high frequency inverter Type Welding machines ▪ SMPS ▪ UPS, Robotics Package : V3 Absolute Maximum Ratings @ Tj=25 Symbol VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque (per leg) Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 TC = 80 TC = 25 TC = 80 Tc= VGE = 0V, Condition IC = 1.0mA Ratings 1200 ± 20 200(260) 400 200(260) 400 10 Unit V V A A A A µs V AC 1 minute 2500 -40 ~ 150 -40 ~ 125 360 3.5 3.5 g Nm Nm Electrical Characteristics @ Tj = 25 Symbol V(BR)CES VCE(ON) VGE(th) ICES IGES (unless otherwise specified) Min 1200 1.4 5.0 - Parameters Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Typ 1.7 5.8 - Max 2.15 6.5 1.0 ± 200 Unit Test cond...