Document
SEMiX 352GB128D
Absolute Maximum Ratings Symbol Conditions IGBT
2 267 : / ', - / 1,( - 267'82
<(( = : > '( = ? 1'(( / 1,( - 2A67'82A
! 1( =
C / ', - / 1', - ', - 5( -
',-.
! % Values
1'(( 34, '4( 9(( ;'( 1(
Units
$ $ $ @
SEMiX® 2 SPT IGBT Modules
SEMiX 352GB128D
www.DataSheet4U.com
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Inverse Diode
2A 2A67 2A 7 ', - 5( - 'B, '(, 9(( '((( <(( 9( CCC D 1,( 9( CCC D 1', $. 1
C 9((( $ $ $ $ $ - -
Module
267 "/
Preliminary Data
Features
Typical Applications $
" %" &
% ! '( )* Remarks +
%
! " !
!#
Characteristics Symbol Conditions IGBT
: 2 ( F: %
% 6/ ! 2:H : 5 CCC D1, 6:
3 E 6: 3 E : 1, : . 2 5 $ : ( .
',-.
! % min.
9., / ', - / ', - / 1', - / ',- / 1',- 1 (.B 9., < 1.B '.1 15.B 1.'9 (.45 1B(( <(( 2
'(($ / 1', - '3( ,, '( ,5, B( '1 (.(53
typ.
,
max.
<., (.3 1.1, 1.(, < 4., '.3, '.,,
Units
$ E E
A
A
A
G
G IJK
2
'(( $. : 1, / ',-! "C / 1',-! "C ',. : ( 1 7*
GB
1
20-04-2007 SCH
© by SEMIKRON
SEMiX 352GB128D
Characteristics Symbol Conditions Inverse Diode
A A( A 2A
'(( $= : ( / ', -! "C / 1', -! "C / ', - / 1', - / ', - / 1', - 2667 F 6/L 2A
'', $ %J% ,3,( $J@ : 1, = <(( ! %% 15 C.
! ! %
) 7,
7< 3 '., ', - 1', - 6 7 7 (.4 1 (.(9, , , ',( / 1', -
min.
typ.
' 1.5 1.1 (.5, 9., 9.5 '9( 31 11
max.
'., '.3 1.9, 1.' ,.3 ,.,
Units
E E $ @ G
SEMiX 2 SPT IGBT Modules
SEMiX 352GB128D
www.DataSheet4U.com
®
(.1,
IJK
E E IJK + + )E I
Module
M 6NDN
Preliminary Data
Features
Temperature sensor
61(( H1((J1', 1((- 6',, )E 661(( 8!PH1((J1',1J1J1((Q= PIQ= H (.9B3;,O 3,,(;'O
Typical Applications $
" %" &
% ! '( )* Remarks +
%
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!#
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
2
20-04-2007 SCH
© by SEMIKRON
SEMiX 352GB128D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' .