SEMIX352GAR128DS

SEMiX352GAR128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 377 268 200 400 -20 ... 20 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 297 204 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 2000 -40 ... 150 Tc = 25 °C Tc = 80 °C 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s SPT IGBT Modules SEMiX352GAR128Ds Tj Inverse diode IF IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 °C Preliminary Data www.DataSheet4U.com Features Homogeneous Si SPT = Soft-Punch-Through technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Tj = 150 °C Typical Applications AC inverter drives UPS Electronic welders up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 18.9 1.24 0.78 1920 2.00 Tj = 25 °C Tj = 125 °C 4.5 1.9 2.10 1 0.9 4.5 6.0 5 0.1 2.35 2.55 1.15 1.05 6.0 7.5 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Co...