HED57XXU12

SPECIFICATION MODEL : HED57XXU12 www.DataSheet4U.com Low Power Hall-Effect Switch DRAWN BY CHECKED BY APPROVED BY S.W. PARK 2006.9.19 S.W. KIM 2006.9.19 H.C. JOUNG 2006.9.19 SAMSUNG ELECTRO-MECHANICS CO.,LTD. 314,Maetan 3-Dong,Yeongtong-Gu,Suwon, Kyunggi-Do,KOREA,443-743 HED57XXU12(060919) Rev.0 Page 1/17 Revision history (Model : HED57XXU12) Date 2006.9.19 Rev. No 0 Contents revised Establishment Design S.W.Park Approval H.C.Joung www.DataSheet4U.com HED57XXU12(060919) Rev.0 Page 2/17 1. Description The HED57XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology. It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a sleep mode. Periodically the device is awakened by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP thresholds then the output transistor is driven to change states accordingly. While in the sleep cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. www.DataSheet4U.com The output transistor ...