DatasheetsPDF.com

BZW06-376 Dataheets PDF



Part Number BZW06-376
Manufacturers Taiwan Semiconductor Company
Logo Taiwan Semiconductor Company
Description Transient Voltage Suppressor Diodes
Datasheet BZW06-376 DatasheetBZW06-376 Datasheet (PDF)

BZW06 SERIES Taiwan Semiconductor CREAT BY ART 600W, 13V - 376V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Cas.

  BZW06-376   BZW06-376



Document
BZW06 SERIES Taiwan Semiconductor CREAT BY ART 600W, 13V - 376V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound: UL flammability classification rating 94V-0 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Weight: 0.4g (approximately) DO-204AC (DO-15) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER Peak power dissipation at TA=25°C, Tp=1ms (Note 1) Steady state power dissipation at TL=75°C lead lengths .375", 9.5mm SYMBOL PPK PD VALUE 600 1.7 UNIT W W Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Junction to leads Junction to ambient on printed circuit L lead=10mm RθJL RθJA 60 100 °C/W Operating junction temperature range Storage temperature range Note 1: Non-repetitive current pulse, per fig. 3 TJ TSTG - 55 to +175 - 55 to +175 °C °C ORDERING INFORMATION PART NO. BZW06-xxx (Note 1) PART NO. SUFFIX H PACKING CODE A0 R0 B0 PACING CODE SUFFIX G Note 1: "xxx" defines voltage from 12.8V (BZW06-13) to 376V (BZW06-376) PACKAGE DO-15 DO-15 DO-15 PACKING 1,500 / Ammo box 3,500 / 13" Paper reel 1,000 / Bulk packing EXAMPLE EXAMPLE PART NO. BZW06-20HA0G PART NO. BZW06-20 PART NO. SUFFIX H PACKING CODE A0 PACING CODE SUFFIX G DESCRIPTION AEC-Q101 qualified Green compound Version: J1602 RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) 100000 10000 FIG. 1 PEAK PULSE POWER RATING CURVE Non-repetitive pulse waveform shown in fig.3 1000 PPPM, PEAK PULSE POWER, W 100 10 0.001 0.01 0.1 1 tp, PULSE WIDTH, (ms) 10 100 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) BZW06 SERIES Taiwan Semiconductor FIG.2 PULSE DERATING CURVE 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (oC) PEAK PULSE CURRENT (%) 140 120 100 80 60 40 20 0 0 FIG. 3 CLAMPING POWER PULSE WAVEFORM tr=10μs Peak Value IPPM Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. td 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms 10000 FIG. 5 TYPICAL JUNCTION CAPACITANCE VCL, CLAMPING VOLTAGE(V) 1000 BWZ06-376 FIG. 4 CLAMPING VOLTAGE CURVE BWZ06-188 100 BWZ06-58 BWZ06-33 BWZ06-19 BWZ06-10 10 BWZ06-5V8 tp=20μs tp=1ms tp=10ms 1 0 1 10 100 Ipp, PEAK PULSE CURRENT(A) 1000 CJ, JUNCTION CAPACITANCE (pF) A 1000 BZW06-13 BZW06-58 100 f=1.0MHz Vsig=50mVp-p BZW06-171 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) 1000 Version: J1602 CJ, JUNCTION CAPACITANCE (pF) A 10000 CREAT BY ART FIG. 6 TYPICAL JUNCTION CAPACITANCE 1000 BZW06-13B BZW06-58B 100 f=1.0MHz Vsig=50mVp-p BZW06-171B 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) 1000 FIG. 8 TYPICAL TRANSIENT THERMAL CHARACTERISTICS 100 10 1 0.01 0.1 1 10 100 T, PULSE DURATION (s) 1000 IR(TJ) / IR(TJ=25oC) INSTANTANEOUS FORWARD CURRENT(A) BZW06 SERIES Taiwan Semiconductor FIG.7 TYPICAL FORWARD CHARACTERISTICS UNDIRECTIONAL TYPE 100 10 25°C 150°C 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 FORWARD VOLTAGE(V) 10000 1000 FIG. 9 RELATIVE VARIATION OF LEAKAGE CURRENT vs JUNCTION TEMPERATURE VR=VRM 100 10 1 0.1 0 25 50 75 100 125 150 TJ (°C) TRANSIENT THERMAL IMPEDANCE(°C/W) Version: J1602 CREAT BY ART BZW06 SERIES Taiwan Semiconductor Breakdown Test Stand-Off Reverse Voltage Current Voltage Leakage Device (Note 1) VBR V @ VWM IT VWM IR mA V μA Unidirectional Bidirectional Min Nom Max Max BZW06-13 BZW06-13B 14.3 15 15.8 1 12.8 5 BZW06-15 BZW06-15B 17.1 18 18.9 1 15.3 1 BZW06-19 BZW06-19B 20.9 22 23.1 1 18.8 1 BZW06-20 BZW06-20B 22.8 24 25.2 1 20.5 1 BZW06-23 BZW06-23B 25.7 27 28.4 1 23.1 1 BZW06-26 BZW06-26B 28.5 30 31.5 1 25.6 1 BZW06-28 BZW06-28B 31.4 33 34.7 1 28.2 1 BZW06-31 BZW06-31B 34.2 36 37.8 1 30.8 1 BZW06-33 BZW06-33B 37.1 39 47.0 1 33.3 1 BZW06-37 BZW06-37B 40.9 43 45.2 1 36.8 1 BZW06-40 BZW06-40B 44.7 47 49.4 1 40.2 1 BZW06-48 BZW06-48B 53.2 56 58.8 1 47.8 1 BZW06-58 BZW06-58B 64.6 68 71.4 1 58.1 1 BZW06-70 BZW06-70B 77.9 82 86.1 1 70.1 1 BZW06-85 BZW06-85B 95 100 105 1 85.5 1 BZW06-102 BZW06-102B 114 120 126 1 102 1 BZW06-128 BZW06-128B 143 150 158 1 128 1 BZW06-154 BZW06-154B 171 180 189 1 154 1 BZW06-171 BZW06-171B 190 200 210 1 171 1 BZW06-188 BZW06-188B 209 220 231 1 188 1 BZW06-213 BZW06-213B 237 250 263.


BZW06-342 BZW06-376 BZW06-5V8B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)