H55S1262EFP-75E

www.DataSheet4U.com 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M (8Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 /Aug. 2009 1 11 128Mbit (8Mx16bit) Mobile SDR Memory H55S1262EFP Series www.DataSheet4U.com Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 Initial Draft - Define IDD specification -. Correct Temp range(p.9 & p.10) -. Modify IDD Values(p.11 & p.12) -. Omit a typo in a package inforamtion -. Modify package information(add tolerance) History Draft Date Sep. 2007 Feb. 2008 Remark Preliminary Preliminary 1.0 Jun. 2008 1.1 1.2 Jul. 2009 Aug. 2009 Rev 1.2 /Aug. 2009 2 11 128Mbit (8Mx16bit) Mobile SDR Memory H55S1262EFP Series www.DataSheet4U.com DESCRIPTION The Hynix H55S1262EFP is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs. The Hynix 128M Mobile SDRAM is 134,217,728-bit CMOS Mobile Synchronous DRAM(Mobile SDR), ideally suited for the main memory applications which requires large memory density and high bandwidth. It is organized as 4banks of 2,097,152x16. Mobile SDRAM is a type of DRAM which operates in synchronization with in...