MX29F200CB

www.DataSheet4U.com MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90ns Compatible with MX29F200T/B device Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command register architecture - Byte/Word Programming (9us/11us typical) - Sector Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x3) Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automatically program and verify data at specified address Status Reply - Data# Polling & Toggle bit for detection of program and erase cycle completion. Ready/Busy# pin(RY/BY#) - Provides a hardware method or detecting program or erase cycle completion Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash - Superior inadvertent write protection Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Temporary sector unprotect allows code changes in previously locked sectors Sector protect/chip unprotect for 5V only system 100,000 minimum erase/program cycles Latch-up protected to 100mA from -1V to VCC+1V Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector Low VCC write inhibit is equal to or less than 3.2V Erase suspend/ Erase Resume - Suspends a...