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HD1750JL
Very high voltage NPN power transistor for high definition and slim CRT display
PRELIMINAR...
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HD1750JL
Very high voltage
NPN power
transistor for high definition and slim CRT display
PRELIMINARY DATA
Features
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State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wider range of optimum drive conditions Less sensitive to operating temperature variation In compliance with the 2002/93/EC European directive
TO-264
2 3
1
Description
The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
Internal schematic diagram
Applications
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High-definition and slim CRT TV and monitors
Order code
Part number HD1750JL Marking HD1750JL Package TO-264 Packaging Tube
February 2007
Rev 3
1/10
www.st.com 10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
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HD1750JL
1
Electrical ratings
Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitte-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperatur...