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Part Number V40150C
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V40150C DatasheetV40150C Datasheet (PDF)

  V40150C   V40150C
www.vishay.com V40150C, VI40150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 3 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V40150C PIN 1 PIN 2 PIN 3 CASE VI40150C PIN 1 PIN 2 PIN 3 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 150 V 160 A 0.75 V 150 °C TO-220AB, TO-262AA Diode variation Dual common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - .



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