New Product
V40100C, VF40100C, VB40100C & VI40100C
www.DataSheet4U.com Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance
2 V40100C
PIN 1 PIN 3 PIN 2 CASE
3 1 VF40100C
PIN 1 PIN 3 PIN 2
2
3
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS
TO-263AB K K
TO-262AA
2 1 1 VB40100C
PIN 1 PIN 2 K HEATSINK
2
3
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
VI40100C
PIN 1 PIN 3 PIN 2 K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100 V 250 A 0.61 V 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG V40100C VF40100C VB40100C VI40100C UNIT V A A V °C 100 40 20 250 1500 - 40 to + 150
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min Operating junction and storage temperature range
Document Number: 89042 Revision: 26-May-08
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 1
New Product
V40100C, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS IR = 1.0 mA Breakdown voltage
(2)
SYMBOL
TYP. 100 (minimum) 105 (minimum) 0.47 0.54 0.67 0.38 0.45 0.61 9 10 21
MAX. -
UNIT
TA = 25 °C IR = 10 mA IF = 5 A IF = 10 A IF = 20 A IF = 5 A IF = 10 A IF = 20 A VR = 70 V TA = 25 °C
VBR
V 0.73 0.67 1000 45
Instantaneous forward voltage per diode (1)
VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
V
Reverse current at rated VR per diode (2) VR = 100 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms
IR
µA mA µA mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance per diode SYMBOL RθJC V40100C 2.0 VF40100C 4.0 VB40100C 2.0 VI40100C 2.0 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V40100C-E3/4W VF40100C-E3/4W VB40100C-E3/4W VB40100C-E3/8W VI40100C-E3/4W UNIT WEIGHT (g) 1.85 1.75 1.39 1.39 1.46 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50 VI40100C 18 16 D = 0.8
Average Forward Current (A)
Average Power Loss (W)
40
VB40100C V40100C VF40100C
14 12 10 8 6 4 2 D = 0.3 D = 0.2 D = 0.1
D = 0.5
30
D = 1.0
20
T
10
D = tp/T 0 5 10 15 20
tp 25
0 0 25 50 75 100 125 150 175
0
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com 2
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 89042 Revision: 26-May-08
New Product
V40100C, VF40100C, VB40100C & VI40100C
www.DataSheet4U.com Vishay General Semiconductor
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
TA = 150 °C
10
TA = 125 °C TA = 100 °C
1
1 TA = 25 °C
V(B,I)40100C 0.1 0.01 0.1 1 10 100
0.1 0 0.2 0.4 0.6 0.8 1
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
100 TA = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Case
10
TA = 125 °C
10
1
TA = 100 °C
0.1 TA = 25 °C 0.01
1
VF40100C 0.1 0.01 0.1 1 10 100
0.001 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10 000
Junction Capacitance (pF)
1000
100 0.1 1 10 100
Reverse Voltage (V)
Figure 5.