QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ADVANCED LINEAR DEVICES, INC.
e TM
EPAD ® ENAB
L
E
D
ALD110802/ALD110902
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPA...
Description
ADVANCED LINEAR DEVICES, INC.
e TM
EPAD ® ENAB
L
E
D
ALD110802/ALD110902
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= +0.20V
GENERAL DESCRIPTION
APPLICATIONS
ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect the V+ pin to the most positive voltage and the V- and IC pins to the most negative voltage in the system. All other pins must have voltages within these voltage limits at all times.
The ALD110802/ALD110902 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in <+0.1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold characteristics and...
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