www.DataSheet4U.com
FDS6299S 30V N-Channel PowerTrench® SyncFET™
November 2007
tm
FDS6299S
30V N-Channel PowerTrench®...
www.DataSheet4U.com
FDS6299S 30V N-Channel PowerTrench® SyncFET™
November 2007
tm
FDS6299S
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6299S is designed to replace a single SO-8 MOSFET and
Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a
Schottky diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore low side switch Point of load low side switch
Features
21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.5 V Includes SyncFET
Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested Termination is Lead-free and RoHS Compliant
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
21 105 2.5 1.2 1 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C...