200V N-Channel MOSFET
FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET
FQP19N20C / FQPF19N20C
N-Channel QFET® MOSFET
200 V, 19 A, 170 mΩ
Nove...
Description
FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET
FQP19N20C / FQPF19N20C
N-Channel QFET® MOSFET
200 V, 19 A, 170 mΩ
November 2013
Features
19 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A
Low Gate Charge (Typ. 40.5 nC) Low Crss (Typ. 85 pF) 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
GDS
TO-220
G
GDS TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage Drain Current Drain Current
-Continuous (TC = 25oC) -Continuous (TC = 1...
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