www.DataSheet4U.com
SEMICONDUCTOR
FORWARD INTERNATIONAL ELECTRONICS LTD.
2SA1267
PNP EPITAXIAL SILICON TRANSISTOR
TEC...
www.DataSheet4U.com
SEMICONDUCTOR
FORWARD INTERNATIONAL ELECTRONICS LTD.
2SA1267
PNP EPITAXIAL SILICON
TRANSISTOR
TECHNICAL DATA
LOW FREQUENCY AMPLIFIER
Package: TO-92S * Complement to 2SC3199 * Collector-Emitter Voltage VCEO=-50V
ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic Symbol Rating Collector-Base Voltage Vcbo -50 Collector-Emitter Voltage Vceo -50 Emitter-Base Voltage Vebo -5 Collector Current Ic -150 Collector Dissipation Pc 450 Junction Temperature Tj 150 Storage Temperature Tstg -55~150
Unit V V V mA mW
0 0
PIN:
1
STYLE
2
3
C C
NO.1
E
C
B
ELECTRICAL CHARACTERISTICS at Tamb=250C
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Symbol BVcbo BVceo BVebo Icbo Hfe Vce(sat) Cob fT Min -50 -50 -5 70 Typ Max Test Conditions Ic=-100uA Ie=0 Ic=-1mA Ib=0 Ie=-100uA Ic=0 Vcb=-50V Ie=0 Vce=-6V Ic=-2mA V Ic=-100mA Ib=-10mA pF Vcb=-10V Ie=0 f=1MHz MHz Vce=-10V Ic=-1mA Unit V V V nA
-100 400 -0.3 7
80
CLASSIFICATION Classification Hfe
HFE O 70-140
Y GR 120-240 200-400
...
