MTDK1S6R

CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) www.DataSheet4U.com Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7 MTDK1S6R Features Low on-resistance High ESD capability High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Easy to use in parallel Pb-free package Equivalent Circuit MTDK1S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Power Dissipation Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP IDR IDRP Pd Tj Tstg 60 ±20 200 700 200 700 1250 150 -55~+150 (Note 1) (Note 1) (Note 3) V V mA mA mA mA mW 300(total) (Note 2) ESD susceptibility Junction Temperature Storage Temperature Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2. 200mW per element must not be exceeded. V °C °C 3. Human body model, 1.5kΩ in series with 100pF MTDK1S6R CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 6.4 13 8.6 15 RDS(ON)* 4.0 12 4.5 6 3.0 4.5 GFS 30 60 Ciss 7.32 Coss 3.42 Crss 7.63 - www.DataSheet4U.com Spec. No. : C320S6R-A Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 2/ 7 Unit V V μA μA Ω mS pF Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=1mA, V...