256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E Family
Document Title
CMOS SRAM www.DataSheet4U.com
256K x16 bit Super Low Power and Low Voltage Full CMOS ...
Description
K6F4016R4E Family
Document Title
CMOS SRAM www.DataSheet4U.com
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 1.0 Initial draft Finalize
Draft Date
November 10, 2000 March 12, 2001
Remark
Preliminary Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 1.0 March 2001
K6F4016R4E Family
FEATURES
CMOS SRAM www.DataSheet4U.com
GENERAL DESCRIPTION
The K6F4016R4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~2.20V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 0.5µ A2) Operating (ICC1, Max) 2mA PKG Type
K6F4016R4E-F
Industrial(-40~85 °C)
1.65~2.2V
701)/85ns
48-TBGA-6.00x7.00
1. The paramet...
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