256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008T2E Family
Document Title
Preliminary CMOS SRAM www.DataSheet4U.com
256Kx8 bit Super Low Power and Low Voltage ...
Description
K6F2008T2E Family
Document Title
Preliminary CMOS SRAM www.DataSheet4U.com
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
Draft Date
June 16 , 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 0.0 June 2003
K6F2008T2E Family
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES
Process Technology: Full CMOS Organization: 256Kx8 Power Supply Voltage: 2.7 ~ 3.6V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 32-TSOP1-0813.4F
Preliminary CMOS SRAM www.DataSheet4U.com
GENERAL DESCRIPTION
The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Industrial(-40~85°C) Vcc Range Speed(ns) Standby (ISB1, Typ) 0.5µA2) Operating (ICC1, Max) 3mA PKG Type
K6F2008T2E-F
2.7~3.6V
551)/70ns
32-TSOP1-0813.4F
1. The parameter is measured with 30pF test load. 2. Typical values are me...
Similar Datasheet