K6F1616R6C

K6F1616R6C Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM www.DataSheet4U.com Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed ball name of E3 (Vss) & H6 (DNU) to NC. - Deleted 85ns Speed bin. Finalize - Deleted 55ns Speed bin. Draft Date November 17, 2003 November 21, 2003 Remark Preliminary Preliminary 1.0 May 24, 2004 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 May 2004 K6F1616R6C Family FEATURES Process Technology: Full CMOS Organization: 1M x16 Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-FBGA-6.00 x 7.00 CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F1616R6C families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F1616R6C-F Operating Temperature Industrial(-40~85°C) ...