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DCR3990A50 Dataheets PDF



Part Number DCR3990A50
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Phase Control Thyristor
Datasheet DCR3990A50 DatasheetDCR3990A50 Datasheet (PDF)

www.DataSheet4U.com DCR3990A52 Phase Control Thyristor Preliminary Information DS5940-1.0 March 2009 (LN 26623) FEATURES Double Side Cooling High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 3990A 53400A 2000V/µs 400A/µs APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 5200 5000 4500 Conditions * Higher dV/dt selections available DCR3990A52* DCR3990A50 DCR3990.

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www.DataSheet4U.com DCR3990A52 Phase Control Thyristor Preliminary Information DS5940-1.0 March 2009 (LN 26623) FEATURES Double Side Cooling High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 3990A 53400A 2000V/µs 400A/µs APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 5200 5000 4500 Conditions * Higher dV/dt selections available DCR3990A52* DCR3990A50 DCR3990A45 Tvj = -40° C to 125° C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. o o *5000V @ -40 C, 5200V @ 0 C Outline type code: A (See Package Details for further information) ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3990A52 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. Fig. 1 Package outline 1/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR www.DataSheet4U.com CURRENT RATINGS Tcase = 60° C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Parameter Test Conditions Max. Units Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load - 3990 6270 5640 A A A SURGE RATINGS Symbol ITSM It 2 Parameter Surge (non-repetitive) on-state current I t for fusing 2 Test Conditions 10ms half sine, Tcase = 125° C VR = 0 Max. 53.4 14.25 Units kA MA s 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance – junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance – case to heatsink Clamping force 83.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 74.0 Max. 0.00603 0.01024 0.01467 0.001 0.002 135 125 125 91.0 Units ° C/W ° C/W ° C/W ° C/W ° C/W ° C ° C ° C kN 2/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR www.DataSheet4U.com DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tcase = 125° C To 67% VDRM, Tj = 125° C, gate open From 67% VDRM to 2x IT(AV) Gate source 30V, 10 , tr < 0.5µs, Tj = 125° C Repetitive 50Hz Non-repetitive Min. - Max. 300 2000 400 1000 Units mA V/µs A/µs A/µs VT(TO) Threshold voltage – Low level Threshold voltage – High level 1000 to 2600A at Tcase = 125° C 2600 to 9000A at Tcase = 125° C 1000 to 2600A at Tcase = 125° C 2600 to 9000A at Tcase = 125° C VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25° C - 0.85 0.99 0.2115 0.1578 3 V V m m µs rT On-state slope resistance – Low level On-state slope resistance – High level tgd Delay time tq Turn-off time Tj = 125° C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear 750 µs QS Stored charge IT = 3000A, Tj = 125° C, dI/dt – 1A/µs, VRpeak ~3100V, VR ~ 2100V 4030 5420 µC IRR Reverse recovery current 49 59 A IL Latching current Tj = 25° C, VD = 5V - 3 A IH Holding current Tj = 25° C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR www.DataSheet4U.com GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT VGD IGT IGD Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current Test Conditions VDRM = 5V, Tcase = 25° C At 50% VDRM, Tcase = 125° C VDRM = 5V, Tcase = 25° C At 50% VDRM, Tcase = 125° C Max. 1.5 0.4 300 10 Units V V mA mA CURVES 9000 8000 Instantaneous on-staate current, I T - (A) 7000 6000 5000 4000 3000 2000 1000 0 0 0.5 1 1.5 2 2.5 Instantaneous on-state voltage , VT - (V) min @ 125ºC max @ 125ºC max @ 25ºC min @ 25ºC Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D. IT Where A = 0.061592 B = 0.115333 C = 0.000119 D = 0.002394 these values are valid for Tj = 125° C for IT 250A to 9000A 4/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR www.DataSheet4U.com 12 180 120 90 60 30 130 120 ( oC ) 110 100 90 80 70 60 50 40 30 20 10 180 120 90 60 30 10 Mean power dissipation - (kW) 6 4 2 Maximum case temperature, T 8 case 0 0 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 125 Maximum heatsink temperature, T Heatsink - ( ° C) 180 120 90 60 30 16 14 Mean power dissipation - (kW) 12 10 8 6 4 2 0 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 0 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30 100 75 50 25 Fig.5 Maximu.


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