Document
www.DataSheet4U.com DCR3790B42
Phase Control Thyristor Preliminary Information
DS5809-1.2 May 2009 (LN26739)
FEATURES
Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 3790A 53500A 1500V/µs 400A/µs
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3500 3000 Conditions
* Higher dV/dt selections available
DCR3790B42 DCR3790B40 DCR3790B35 DCR3790B30
Tvj = -40° C to 125° C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available.
Outline type code: B (See Package Details for further information)
ORDERING INFORMATION
Fig. 1 Package outline
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3790B42
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
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CURRENT RATINGS
Tcase = 60° C unless stated otherwise
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
3790 5953 5330
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125° C VR = 0
Max. 53.5 14.31
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance – junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance – case to heatsink Clamping force 70.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 63.0 Max. 0.007 0.0116 0.0181 0.0014 0.0028 135 125 125 77.0 Units ° C/W ° C/W ° C/W ° C/W ° C/W ° C ° C ° C kN
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DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125° C To 67% VDRM, Tj = 125° C, gate open From 67% VDRM to 2x IT(AV) Gate source 30V, 10 , tr < 0.5µs, Tj = 125° C
Repetitive 50Hz Non-repetitive
Min. -
Max. 200 1500 200 400
Units mA V/µs A/µs A/µs
VT(TO)
Threshold voltage – Low level Threshold voltage – High level
700A to 4100A at Tcase = 125° C 4100A to 12000A at Tcase = 125° C 700A to 4100A at Tcase = 125° C 4100A to 12000A at Tcase = 125° C VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25° C
TBD
0.83 1.0 0.1688 0.1263 TBD
V V m m µs
rT
On-state slope resistance – Low level On-state slope resistance – High level
tgd
Delay time
tq
Turn-off time
Tj = 125° C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear
250
500
µs
QS IL IH
Stored charge Latching current Holding current
IT = 2000A, Tj = 125° C, dI/dt – 1A/µs, Tj = 25° C, VD = 5V Tj = 25° C, RG-K = , ITM = 500A, IT = 5A
1500 -
4500 3 300
µC A mA
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25° C At 50% VDRM, Tcase = 125° C VDRM = 5V, Tcase = 25° C At 50% VDRM, Tcase = 125° C
Max. 1.5 0.4 250 10
Units V V mA mA
CURVES
7000
Instantaneous on-state current IT - (A)
6000 5000 4000 3000 2000 1000 0 0.5
min 125° C max 125° C min 25° C max 25° C
1.0
1.5
2.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D. IT
Where
A = 0.348967 B = 0.066851 C = 0.000102 D = 0.003788 these values are valid for Tj = 125° C for IT 500A to 10000A
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130
Maximum case temperature, T case ( C )
10
120 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000
180 120 90 60 30
Mean power dissipation - (kW)
9 8 7 6 5 4 3 2 1 0 0 1000 2000 3000 4000 5000 180 120 90 60 30
o
5000
6000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature, double side cooled – sine wave
( oC )
130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 5000 6000 180 120 90
12 11
Heatsink -
Mean power dissipation - (kW)
Maximum heatsink temperature, T
60 30
10 9 8 7 6 5 4 3 2 1 0 0 1000 2000 3000 4000 5000 6000 7000 d.c. 180 120 90 60 30
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature, double side coole.