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DCR3790B42 Dataheets PDF



Part Number DCR3790B42
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Phase Control Thyristor
Datasheet DCR3790B42 DatasheetDCR3790B42 Datasheet (PDF)

www.DataSheet4U.com DCR3790B42 Phase Control Thyristor Preliminary Information DS5809-1.2 May 2009 (LN26739) FEATURES Double Side Cooling High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 3790A 53500A 1500V/µs 400A/µs APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3500 3000 Conditions * Higher dV/dt selections available DCR3790B42 DCR3790B40 DCR3790.

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www.DataSheet4U.com DCR3790B42 Phase Control Thyristor Preliminary Information DS5809-1.2 May 2009 (LN26739) FEATURES Double Side Cooling High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 3790A 53500A 1500V/µs 400A/µs APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3500 3000 Conditions * Higher dV/dt selections available DCR3790B42 DCR3790B40 DCR3790B35 DCR3790B30 Tvj = -40° C to 125° C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: B (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3790B42 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR www.DataSheet4U.com CURRENT RATINGS Tcase = 60° C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Parameter Test Conditions Max. Units Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load - 3790 5953 5330 A A A SURGE RATINGS Symbol ITSM It 2 Parameter Surge (non-repetitive) on-state current I t for fusing 2 Test Conditions 10ms half sine, Tcase = 125° C VR = 0 Max. 53.5 14.31 Units kA MA s 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance – junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance – case to heatsink Clamping force 70.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 63.0 Max. 0.007 0.0116 0.0181 0.0014 0.0028 135 125 125 77.0 Units ° C/W ° C/W ° C/W ° C/W ° C/W ° C ° C ° C kN 2/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR www.DataSheet4U.com DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tcase = 125° C To 67% VDRM, Tj = 125° C, gate open From 67% VDRM to 2x IT(AV) Gate source 30V, 10 , tr < 0.5µs, Tj = 125° C Repetitive 50Hz Non-repetitive Min. - Max. 200 1500 200 400 Units mA V/µs A/µs A/µs VT(TO) Threshold voltage – Low level Threshold voltage – High level 700A to 4100A at Tcase = 125° C 4100A to 12000A at Tcase = 125° C 700A to 4100A at Tcase = 125° C 4100A to 12000A at Tcase = 125° C VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25° C TBD 0.83 1.0 0.1688 0.1263 TBD V V m m µs rT On-state slope resistance – Low level On-state slope resistance – High level tgd Delay time tq Turn-off time Tj = 125° C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear 250 500 µs QS IL IH Stored charge Latching current Holding current IT = 2000A, Tj = 125° C, dI/dt – 1A/µs, Tj = 25° C, VD = 5V Tj = 25° C, RG-K = , ITM = 500A, IT = 5A 1500 - 4500 3 300 µC A mA 3/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR www.DataSheet4U.com GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT VGD IGT IGD Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current Test Conditions VDRM = 5V, Tcase = 25° C At 50% VDRM, Tcase = 125° C VDRM = 5V, Tcase = 25° C At 50% VDRM, Tcase = 125° C Max. 1.5 0.4 250 10 Units V V mA mA CURVES 7000 Instantaneous on-state current IT - (A) 6000 5000 4000 3000 2000 1000 0 0.5 min 125° C max 125° C min 25° C max 25° C 1.0 1.5 2.0 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D. IT Where A = 0.348967 B = 0.066851 C = 0.000102 D = 0.003788 these values are valid for Tj = 125° C for IT 500A to 10000A 4/10 www.dynexsemi.com DCR3790B42 SEMICONDUCTOR www.DataSheet4U.com 11 130 Maximum case temperature, T case ( C ) 10 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 180 120 90 60 30 Mean power dissipation - (kW) 9 8 7 6 5 4 3 2 1 0 0 1000 2000 3000 4000 5000 180 120 90 60 30 o 5000 6000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave ( oC ) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 5000 6000 180 120 90 12 11 Heatsink - Mean power dissipation - (kW) Maximum heatsink temperature, T 60 30 10 9 8 7 6 5 4 3 2 1 0 0 1000 2000 3000 4000 5000 6000 7000 d.c. 180 120 90 60 30 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side coole.


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