DatasheetsPDF.com

K4S64163LH-RBN

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Description

K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES 2.5V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs...

Samsung semiconductor

Download K4S64163LH-RBN Datasheet

Similar Datasheet

K4S64163LH-RBC 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RBE 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RBF 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RBG 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RBL 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RBN 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RC 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RE 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RF 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor
K4S64163LH-RG 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA - Samsung semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)