N-Channel MOSFET
Si7434DP
New Product
Vishay Siliconix
www.DataSheet4U.com
N-Channel 250-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
250
F...
Description
Si7434DP
New Product
Vishay Siliconix
www.DataSheet4U.com
N-Channel 250-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
250
FEATURES
ID (A)
3.8 3.7
rDS(on) (W)
0.155 @ VGS = 10 V 0.162 @ VGS = 6 V
D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested
APPLICATIONS
D Primary Side Switch In: − Telecom Power Supplies − Distributed Power Architectures − Miniature Power Modules
PowerPAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
G N-Channel MOSFET
Bottom View Ordering Information: Si7434DP-T1—E3 Creepage Clearance: 30 mils
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
250 "20 3.8 3.0 40 4.3 13 8.4 5.2 3.3
Steady State
Unit
V
2.3 1.8 A 1.6
mJ 1.9 1.2 W _C
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72579 S-32408—Rev. A, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
19 52 1.5
Maximum
24 65 1.8
Unit
_C/W
1
Si7434DP
Vishay Siliconix
New Product
www.DataS...
Similar Datasheet