Document
SUM110N06-3m4L
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Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 60 rDS(on) (Ω) 0.0034 at VGS = 10 V 0.0041 at VGS = 4.5 V ID (A) 110a
FEATURES
• TrenchFET® Power MOSFET • 100 % Rg Tested
RoHS
COMPLIANT
D
TO-263
G
G
D S
S
Top View
Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 60 ± 20 110a 110a 440 75 280 375b 3.75 - 55 to 175 mJ W °C A Unit V
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Package limited. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). PCB Mountc Symbol RthJA RthJC Typical 40 0.4 Unit °C/W
Document Number: 73036 S-80272-Rev. B, 11-Feb-08
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SUM110N06-3m4L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 125 °C VDS = 60 V, VGS = 0 V, TJ = 175 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125 °C VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec
c c
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Symbol
Test Conditions
Min. 60 1
Typ.
Max.
Unit
3 ± 100 1 50 10
V nA µA mA A
120 0.0028 0.0033 0.0034 0.0041 0.0055 0.007 30 12900
Ω
gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf
VDS = 15 V, ID = 30 A
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
1060 700 200 300
pF
VDS = 30 V, VGS = 10 V, ID = 110 A f = 1.0 MHz VDD = 30 V, RL = 0.4 Ω ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω 0.65
50 33 1.3 22 130 110 280 2 35 200 165 420 110 440 1.0 55 3.6 0.1 1.5 82 5.4 0.22
nC Ω
Timec
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge ISM VSD trr IRM(REC) Qrr IF = 110 A, di/dt = 100 A/µs IF = 110 A, VGS = 0 V
A V ns A µC
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 73036 S-80272-Rev. B, 11-Feb-08
SUM110N06-3m4L
www.DataSheet4U.com
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250 VGS = 10 thru 5 V 4V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250
150
150
100
100 TC = 125 °C 50 25 °C - 55 °C
50
3V 2V
0 0 2 4 6 8 10
0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
480 TC = - 55 °C 400 g fs - Transconductance (S) 25 °C 320 125 °C 240 r DS(on) - On-Resistance (Ω) 0.005 0.006
Transfer Characteristics
0.004
VGS = 4.5 V
0.003 VGS = 10 V 0.002
160
80
0.001
0 0 20 40 60 80 100
0.000 0 20 40 60 80 100 120
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
18000 20
On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
15000 C - Capacitance (pF)
Ciss
16
VGS = 30 V ID = 110 A
12000
12
9000
8
6000 Coss Crss 0 5 10 15 20 25 30 35 40
3000
4
0
0 0 50 100 150 200 250 300 350 400
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 73036 S-80272-Rev. B, 11-Feb-08
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SUM110N06-3m4L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.3 VGS = 10 V ID = 30 A I S - Source Current (A) 100
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2.0 rDS(on) - On-Resistance (Normalized)
1.7
TJ = 150 °C 10
TJ = 25 °C
1.4
1.1
0.8
0.5 - 50
1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
1000 74 72 100 I Dav (A) IAV (A) at T A = 25 °C V(BR)D.