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SUM110N06-3m4L Dataheets PDF



Part Number SUM110N06-3m4L
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SUM110N06-3m4L DatasheetSUM110N06-3m4L Datasheet (PDF)

SUM110N06-3m4L www.DataSheet4U.com Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0034 at VGS = 10 V 0.0041 at VGS = 4.5 V ID (A) 110a FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT D TO-263 G G D S S Top View Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu.

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SUM110N06-3m4L www.DataSheet4U.com Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0034 at VGS = 10 V 0.0041 at VGS = 4.5 V ID (A) 110a FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT D TO-263 G G D S S Top View Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 60 ± 20 110a 110a 440 75 280 375b 3.75 - 55 to 175 mJ W °C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Package limited. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). PCB Mountc Symbol RthJA RthJC Typical 40 0.4 Unit °C/W Document Number: 73036 S-80272-Rev. B, 11-Feb-08 www.vishay.com 1 SUM110N06-3m4L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 125 °C VDS = 60 V, VGS = 0 V, TJ = 175 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125 °C VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec c c www.DataSheet4U.com Symbol Test Conditions Min. 60 1 Typ. Max. Unit 3 ± 100 1 50 10 V nA µA mA A 120 0.0028 0.0033 0.0034 0.0041 0.0055 0.007 30 12900 Ω gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDS = 15 V, ID = 30 A S VGS = 0 V, VDS = 25 V, f = 1 MHz 1060 700 200 300 pF VDS = 30 V, VGS = 10 V, ID = 110 A f = 1.0 MHz VDD = 30 V, RL = 0.4 Ω ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω 0.65 50 33 1.3 22 130 110 280 2 35 200 165 420 110 440 1.0 55 3.6 0.1 1.5 82 5.4 0.22 nC Ω Timec ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge ISM VSD trr IRM(REC) Qrr IF = 110 A, di/dt = 100 A/µs IF = 110 A, VGS = 0 V A V ns A µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73036 S-80272-Rev. B, 11-Feb-08 SUM110N06-3m4L www.DataSheet4U.com Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 VGS = 10 thru 5 V 4V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250 150 150 100 100 TC = 125 °C 50 25 °C - 55 °C 50 3V 2V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 480 TC = - 55 °C 400 g fs - Transconductance (S) 25 °C 320 125 °C 240 r DS(on) - On-Resistance (Ω) 0.005 0.006 Transfer Characteristics 0.004 VGS = 4.5 V 0.003 VGS = 10 V 0.002 160 80 0.001 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance 18000 20 On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 15000 C - Capacitance (pF) Ciss 16 VGS = 30 V ID = 110 A 12000 12 9000 8 6000 Coss Crss 0 5 10 15 20 25 30 35 40 3000 4 0 0 0 50 100 150 200 250 300 350 400 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 73036 S-80272-Rev. B, 11-Feb-08 www.vishay.com 3 SUM110N06-3m4L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.3 VGS = 10 V ID = 30 A I S - Source Current (A) 100 www.DataSheet4U.com 2.0 rDS(on) - On-Resistance (Normalized) 1.7 TJ = 150 °C 10 TJ = 25 °C 1.4 1.1 0.8 0.5 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 1000 74 72 100 I Dav (A) IAV (A) at T A = 25 °C V(BR)D.


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