SI7970DP

Si7970DP New Product Vishay Siliconix www.DataSheet4U.com Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) 0.019 @ VGS = 10 V 0.026 @ VGS = 4.5 V ID (A) 10.2 8.7 D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Dual MOSFET for Space Savings 100% Rg Tested Package APPLICATIONS D Primary Side Switch − Low Power Quarter Buck D Intermediate BUS Switch PowerPAK SO-8 D1 D2 6.15 mm S1 1 2 G1 S2 5.15 mm 3 4 G2 D1 8 7 G1 D1 D2 G2 6 5 D2 Bottom View Ordering Information: Si7970DP-T1—E3 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 40 "20 10.2 8.2 40 2.9 30 45 3.5 2.2 Steady State Unit V 6.5 5.2 A 1.2 mJ 1.4 0.9 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72826 S-40431—Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 60 2.2 Maximum 35 85 2.7 Unit _C/W 1 Si7970DP...