SI7940DP

Si7940DP New Product Vishay Siliconix www.DataSheet4U.com Dual N-Channel 12-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized ID (A) 11.8 9.8 PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) 0.017 @ VGS = 4.5 V 0.025 @ VGS = 2.5 V APPLICATIONS D Point-of-Load Synchronous Rectifier - 5-V or 3.3-V BUS Step Down - Qg Optimized for 500-kHz + Operation D Synchronous Buck Shoot-Through Resistant D1 PowerPAKt D2 6.15 mm S1 1 2 5.15 mm G1 S2 3 4 D1 G2 G1 G2 8 7 D1 D2 6 5 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 12 "8 11.8 Steady State Unit V 7.6 6.1 20 A 1.1 1.4 0.9 -55 to 150 W _C ID IDM IS PD TJ, Tstg 9.5 2.9 3.5 2.2 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71845 S-21167—Rev. B, 29-Jul-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 60 3.9 Maximum 35 85 5.5 Unit _C/W 1 Si7940DP Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ ...