Document
Si7921DN
New Product
www.DataSheet4U.com
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) –30 rDS(on) (Ω) 0.063 @ VGS = –10 V 0.110 @ VGS = –4.5 V ID (A) –5.1 –3.8
FEATURES
• TrenchFET® Power MOSFETS • New Low Thermal Resistance PowerPAK® Package
Pb-free Available
APPLICATIONS
• Portable – Battery Switch – Load Switch
RoHS*
COMPLIANT
PowerPAK 1212-8
S1
S1
S2
3.30 mm
1 2
3.30 mm
G1 S2
3 4
D1
G2
G1
G2
8 7
D1 D2
6 5
D2
Bottom View
D1 P-Channel MOSFET
D2 P-Channel MOSFET
Ordering Information: Si7921DN-T1
Si7921DN–T1–E3 (Lead (Pb)–free)
ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25°C TA = 85°C TA = 25°C TA = 85°C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs –30 ±20 –5.1 –3.7 –20 –2.1 2.5 1.3 –55 to 150 260 –1.1 1.3 0.85 –3.7 –2.7 Steady State Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta t ≤ 10 sec Steady State Steady State Symbol RthJA Typical 40 75 5.6 Maximum 50 94 7 Unit
°C/W Maximum Junction-to-Case RthJC Notes a. Surface Mounted on 1“ x 1“ FR4 Board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72341 S-51210–Rev. B, 27-Jun-05 www.vishay.com 1
Si7921DN
Vishay Siliconix
New Product
www.DataSheet4U.com
SPECIFICATIONS TJ = 25°C, unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = –2.1 A, di/dt = 100 A/µs VDD = –15 V, RL = 15 Ω ID ≅ –1 A, VGEN = –10 V, RG = 6 Ω VDS = –15 V, VGS = –10 V, ID = –5.1 A 10.5 1.8 2.8 8.5 10 15 25 20 25 15 25 40 30 50 ns Ω 16 nC VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 µA VDS = 0 V, VGS = ±20 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55°C VDS ≤ –5 V, VGS = –10 V VGS = –10 V, ID = –5.1 A VGS = –4.5 V, ID = –3.8 A VDS = –15 V, ID = –5.1 A IS = –2.1 A, VGS = 0 V –20 0.050 0.085 9 –0.8 –1.2 0.063 0.110 –1.0 –3.0 ±100 –1 –5 µA A Ω S V V nA Symbol Test Condition Min Typ Max Unit
Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted
20 VGS =10 thru 5 V 16 I D – Drain Current (A) I D – Drain Current (A) 16 20 TC = –55˚C 25˚C
12 4V 8
12
125˚C
8
4 3V 0 0 1 2 3 4 5
4
0 0 1 2 3 4 5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Output Characteristics www.vishay.com 2
Transfer Characteristics Document Number: 72341 S-51210–Rev. B, 27-Jun-05
Si7921DN
New Product
TYPICAL CHARACTERISTICS
0.30
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Vishay Siliconix
TA = 25°C, unless otherwise noted
800
r DS(on) – On-Resistance (Ω )
0.25 C – Capacitance (pF) 600 Ciss 400
0.20
0.15 VGS = 4.5 V 0.10 VGS = 10 V 0.05
200 Coss Crss
0.00 0 4 8 12 16 20
0 0 5 10 15 20 25 30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 5.1 A 8 rDS(on) – On–Resistance (Normalized) 1.4 1.6 VGS = 10 V ID = 5.1 A
Capacitance
6
1.2
4
1.0
2
0.8
0 0 2 4 6 8 10 12 Qg – Total Gate Charge (nC)
0.6 –50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature ( ˚C)
Gate Charge
0.30 TJ = 150˚C I S – Source Current (A) 10 r DS(on) – On-Resistance (Ω )
On-Resistance vs. Junction Temperature
20
0.25 ID = 5.1 A 0.20
0.15
0.10
0.05 TJ = 25˚C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-t.