SI7911DN

Si7911DN New Product Vishay Siliconix www.DataSheet4U.com Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.051 @ VGS = - 4.5 V - 20 0.067 @ VGS = - 2.5 V 0.094 @ VGS = - 1.8 V FEATURES ID (A) - 5.7 - 5.0 - 4.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKr Package APPLICATIONS D Portable - PA Switch - Battery Switch - Load Switch PowerPAK 1212-8 S1 S2 3.30 mm S1 1 2 3.30 mm G1 S2 G1 G2 3 4 D1 G2 8 7 D1 D2 D1 6 5 D2 D2 P-Channel MOSFET Ordering Information: Si7911DN-T1 P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID - 4.1 IDM IS - 2.1 2.5 1.3 - 55 to 150 - 20 - 1.1 1.3 0.85 W _C - 3.0 A Symbol VDS VGS 10 secs Steady State - 20 "8 Unit V - 5.7 - 4.2 THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72340 S-31612—Rev. A, 11-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 40 75 5.6 Maximum 50 94 7 Unit _C/W 1 Si7911DN Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWIS...