Document
BUK7510-55AL
N-channel TrenchMOS standard level FET
Rev. 02 — 3 January 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features
175 °C rated Stable operation in linear mode Q101 compliant TrenchMOS technology
1.3 Applications
12 V and 24 V loads DC linear motor control Automotive systems Repetitive clamped inductive switching
1.4 Quick reference data
Table 1. Symbol ID Ptot EDS(AL)S Quick reference Parameter drain current Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4
[1]
Min -
Typ -
Max Unit 75 300 1.1 A W J
total power dissipation Tmb = 25 °C; see Figure 2 non-repetitive drain-source avalanche energy ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13
Avalanche ruggedness
Static characteristics RDSon drain-source on-state resistance 8.5 10 mΩ
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK7510-55AL
w w w . D alevel t a S h e e t 4 U . N-channel TrenchMOS standard FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name BUK7510-55AL TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj peak drain current total power dissipation storage temperature junction temperature ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load see Figure 3
[4][5] [6] [1][2] [3] [3]
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ
Min -20 -55 -55 -
Max 55 55 20 122 75 75 490 300 175 175 1.1
Unit V V V A A A A W °C °C J
Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy
-
-
J
BUK7510-55AL_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 January 2008
2 of 14
NXP Semiconductors
BUK7510-55AL
www.DataSheet4U.com N-channel TrenchMOS standard level FET
Table 4. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Source-drain diode IS ISM
[1] [2] [3] [4] [5] [6]
Conditions Tmb = 25 °C Tmb = 25 °C tp ≤ 10 μs; pulsed; Tmb = 25 °C
[1][2] [3]
Min -
Max 122 75 490
Unit A A A
source current peak source current
Current is limited by power dissipation chip rating. Refer to document 9397 750 12572 for further information. Continuous current is limited by package. Single-shot avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by average junction temperature of 170 °C. Refer to AN10273 for further information.
150 ID (A) 100
(1)
003aaa726
120 Pder (%) 80
03aa16
50
40
0 0 50 100 150 Tmb (°C) 200
0 0 50 100 150 Tmb (°C) 200
VGS 10 V (1) Capped at 75 A due to package.
P der =
P tot P tot (25°C )
× 100 %
Fig 1. Continuous drain current as a function of mounting base temperature
Fig 2. Normalized total power dissipation as a function of mounting base temperature
BUK7510-55AL_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 January 2008
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BUK7510-55AL
www.DataSheet4U.com N-channel TrenchMOS standard level FET
102 IAV (A)
003aaa739 (1)
Tj = 25 ˚C
(2)
10
(3)
150 ˚C
1
10-1 10-2
10-1
1
tAV (ms)
10
(1) Singleíshot. (2) Singleíshot. (3) Repetitive.
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
103 ID (A) 102
(1) 003aaa737
Limit RDSon = VDS / ID
tp = 10 μ s
100 μ s
1 ms DC 10 10 ms 100 ms
1 1 10 VDS (V)
102
Tmb = 25 °C ; IDM is single pulse (1) Capped at 75 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7510-55AL_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 January 2008
4 of 14
NXP Semiconductors
BUK7510-55AL
w standard w w . D a t a FET S h e e t 4 U . N-channel TrenchMOS level
5. Thermal characteristics
Table .