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BUK7510-55AL Dataheets PDF



Part Number BUK7510-55AL
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK7510-55AL DatasheetBUK7510-55AL Datasheet (PDF)

BUK7510-55AL N-channel TrenchMOS standard level FET Rev. 02 — 3 January 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features .

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BUK7510-55AL N-channel TrenchMOS standard level FET Rev. 02 — 3 January 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Stable operation in linear mode „ Q101 compliant „ TrenchMOS technology 1.3 Applications „ 12 V and 24 V loads „ DC linear motor control „ Automotive systems „ Repetitive clamped inductive switching 1.4 Quick reference data Table 1. Symbol ID Ptot EDS(AL)S Quick reference Parameter drain current Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 [1] Min - Typ - Max Unit 75 300 1.1 A W J total power dissipation Tmb = 25 °C; see Figure 2 non-repetitive drain-source avalanche energy ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 Avalanche ruggedness Static characteristics RDSon drain-source on-state resistance 8.5 10 mΩ [1] Continuous current is limited by package. NXP Semiconductors BUK7510-55AL w w w . D alevel t a S h e e t 4 U . N-channel TrenchMOS standard FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain G mbb076 Simplified outline mb Graphic symbol D S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK7510-55AL TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj peak drain current total power dissipation storage temperature junction temperature ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load see Figure 3 [4][5] [6] [1][2] [3] [3] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 - Max 55 55 20 122 75 75 490 300 175 175 1.1 Unit V V V A A A A W °C °C J Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy - - J BUK7510-55AL_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 January 2008 2 of 14 NXP Semiconductors BUK7510-55AL www.DataSheet4U.com N-channel TrenchMOS standard level FET Table 4. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Source-drain diode IS ISM [1] [2] [3] [4] [5] [6] Conditions Tmb = 25 °C Tmb = 25 °C tp ≤ 10 μs; pulsed; Tmb = 25 °C [1][2] [3] Min - Max 122 75 490 Unit A A A source current peak source current Current is limited by power dissipation chip rating. Refer to document 9397 750 12572 for further information. Continuous current is limited by package. Single-shot avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by average junction temperature of 170 °C. Refer to AN10273 for further information. 150 ID (A) 100 (1) 003aaa726 120 Pder (%) 80 03aa16 50 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 VGS • 10 V (1) Capped at 75 A due to package. P der = P tot P tot (25°C ) × 100 % Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature BUK7510-55AL_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 January 2008 3 of 14 NXP Semiconductors BUK7510-55AL www.DataSheet4U.com N-channel TrenchMOS standard level FET 102 IAV (A) 003aaa739 (1) Tj = 25 ˚C (2) 10 (3) 150 ˚C 1 10-1 10-2 10-1 1 tAV (ms) 10 (1) Singleíshot. (2) Singleíshot. (3) Repetitive. Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period 103 ID (A) 102 (1) 003aaa737 Limit RDSon = VDS / ID tp = 10 μ s 100 μ s 1 ms DC 10 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 °C ; IDM is single pulse (1) Capped at 75 A due to package. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7510-55AL_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 January 2008 4 of 14 NXP Semiconductors BUK7510-55AL w standard w w . D a t a FET S h e e t 4 U . N-channel TrenchMOS level 5. Thermal characteristics Table .


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