Document
BAP51L
Silicon PIN diode
Rev. 01 — 11 March 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Planar PIN diode in a SOD882 leadless ultra small SMD plastic package.
1.2 Features
s s s s s High speed switching for RF signals Low diode capacitance Low forward resistance Very low series inductance For applications up to 3 GHz
1.3 Applications
s RF attenuators and switches
2. Pinning information
Table 1: Pin 1 2 Pinning Description cathode anode
1 2
sym006
Simplified outline
[1]
Symbol
Transparent top view
[1]
The marking bar indicates the cathode
3. Ordering information
Table 2: Ordering information Package Name BAP51L Description leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm Version SOD882 Type number
Philips Semiconductors
www.DataSheet4U.com
BAP51L
Silicon PIN diode
4. Marking
Table 3: BAP51L Marking Marking code E2 Type number
5. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter reverse voltage forward current total power dissipation storage temperature junction temperature Tsp = 90 °C Conditions Min −65 −65 Max 60 100 500 +150 +150 Unit V mA mW °C °C
6. Thermal characteristics
Table 5: Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 100 Unit K/W
7. Characteristics
Table 6: Electrical characteristics Tj = 25 °C unless otherwise specified. Symbol VF IR Cd Parameter forward voltage reverse current diode capacitance Conditions IF = 50 mA VR = 50 V f = 1 MHz; see Figure 2 VR = 0 V VR = 1 V VR = 5 V rD diode forward resistance f = 100 MHz; see Figure 1 IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA s21 2 isolation VR = 0 V; see Figure 4 f = 900 MHz f = 1800 MHz f = 2450 MHz
9397 750 14554
Min -
Typ 0.95 0.30 0.23 0.17 5.3 3.5 1.4 0.9 19 15 13
Max 1.1 100 0.4 0.3 9 6.5 2.5 1.5 -
Unit V nA pF pF pF Ω Ω Ω Ω dB dB dB
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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
Philips Semiconductors
www.DataSheet4U.com
BAP51L
Silicon PIN diode
Table 6: Electrical characteristics …continued Tj = 25 °C unless otherwise specified. Symbol s21 2 Parameter insertion loss Conditions IF = 0.5 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 1 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 10 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 100 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA IF = 100 mA; f = 100 MHz 0.07 0.07 0.09 0.55 dB dB dB µs 0.11 0.11 0.12 dB dB dB 0.26 0.26 0.27 dB dB dB 0.4 0.39 0.4 dB dB dB Min Typ Max Unit
LS
series inductance
-
0.6
-
nH
102 rD (Ω) 10
001aac397
400 Cd (fF) 300
001aac396
200
1 100
10−1 10−1
1
10 IF (mA)
102
0 0 5 10 15 VR (V) 20
f = 100 MHz; Tj = 25 °C
f = 1 MHz; Tj = 25 °C
Fig 1. Forward resistance as a function of forward current; typical values
Fig 2. Diode capacitance as a function of reverse voltage; typical values
9397 750 14554
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
3 of 8
Philips Semiconductors
www.DataSheet4U.com
BAP51L
Silicon PIN diode
0
(1) (2)
001aac399
0 s21 2 (dB) −10
001aac398
s21 2 (dB)
(3) (4)
−0.5
−20
−30
−1 0 1000 2000 f (MHz) 3000
−40 0 1000 2000 f (MHz) 3000
Tamb = 25 °C (1) IF = 100 mA (2) IF = 10 mA (3) IF = 1 mA (4) IF = 0.5 mA Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network
Tamb = 25 °C Diode zero biased and inserted in series with a 50 Ω stripline circuit
Fig 3. Insertion loss (|s21|2) of the diode as a function of frequency; typical values
Fig 4. Isolation (|s21|2) of the diode as a function of frequency; typical values
9397 750 14554
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
4 of 8
Philips Semiconductors
www.DataSheet4U.com
BAP51L
Silicon PIN diode
8. Package outline
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882
L
L
1
2
b
e1
A A1
E
D
(2) 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e1 0.65 L 0.30 0.22 0.5 scale 1 mm
Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION SOD882 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17
Fig 5. Package outline SOD882
9397 750 14554 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
5 of 8
Philips Semiconductors
www.DataSheet4U.com
BAP51L
Silicon PIN diode
9. Revision history
Table 7: BAP51L_1 Revision history Rele.