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BAP51L Dataheets PDF



Part Number BAP51L
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description Silicon PIN diode
Datasheet BAP51L DatasheetBAP51L Datasheet (PDF)

BAP51L Silicon PIN diode Rev. 01 — 11 March 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. 1.2 Features s s s s s High speed switching for RF signals Low diode capacitance Low forward resistance Very low series inductance For applications up to 3 GHz 1.3 Applications s RF attenuators and switches 2. Pinning information Table 1: Pin 1 2 Pinning Description cathode anode 1 2 sym006 .

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BAP51L Silicon PIN diode Rev. 01 — 11 March 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. 1.2 Features s s s s s High speed switching for RF signals Low diode capacitance Low forward resistance Very low series inductance For applications up to 3 GHz 1.3 Applications s RF attenuators and switches 2. Pinning information Table 1: Pin 1 2 Pinning Description cathode anode 1 2 sym006 Simplified outline [1] Symbol Transparent top view [1] The marking bar indicates the cathode 3. Ordering information Table 2: Ordering information Package Name BAP51L Description leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm Version SOD882 Type number Philips Semiconductors www.DataSheet4U.com BAP51L Silicon PIN diode 4. Marking Table 3: BAP51L Marking Marking code E2 Type number 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter reverse voltage forward current total power dissipation storage temperature junction temperature Tsp = 90 °C Conditions Min −65 −65 Max 60 100 500 +150 +150 Unit V mA mW °C °C 6. Thermal characteristics Table 5: Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 100 Unit K/W 7. Characteristics Table 6: Electrical characteristics Tj = 25 °C unless otherwise specified. Symbol VF IR Cd Parameter forward voltage reverse current diode capacitance Conditions IF = 50 mA VR = 50 V f = 1 MHz; see Figure 2 VR = 0 V VR = 1 V VR = 5 V rD diode forward resistance f = 100 MHz; see Figure 1 IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA s21 2 isolation VR = 0 V; see Figure 4 f = 900 MHz f = 1800 MHz f = 2450 MHz 9397 750 14554 Min - Typ 0.95 0.30 0.23 0.17 5.3 3.5 1.4 0.9 19 15 13 Max 1.1 100 0.4 0.3 9 6.5 2.5 1.5 - Unit V nA pF pF pF Ω Ω Ω Ω dB dB dB 2 of 8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 March 2005 Philips Semiconductors www.DataSheet4U.com BAP51L Silicon PIN diode Table 6: Electrical characteristics …continued Tj = 25 °C unless otherwise specified. Symbol s21 2 Parameter insertion loss Conditions IF = 0.5 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 1 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 10 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 100 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA IF = 100 mA; f = 100 MHz 0.07 0.07 0.09 0.55 dB dB dB µs 0.11 0.11 0.12 dB dB dB 0.26 0.26 0.27 dB dB dB 0.4 0.39 0.4 dB dB dB Min Typ Max Unit LS series inductance - 0.6 - nH 102 rD (Ω) 10 001aac397 400 Cd (fF) 300 001aac396 200 1 100 10−1 10−1 1 10 IF (mA) 102 0 0 5 10 15 VR (V) 20 f = 100 MHz; Tj = 25 °C f = 1 MHz; Tj = 25 °C Fig 1. Forward resistance as a function of forward current; typical values Fig 2. Diode capacitance as a function of reverse voltage; typical values 9397 750 14554 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 March 2005 3 of 8 Philips Semiconductors www.DataSheet4U.com BAP51L Silicon PIN diode 0 (1) (2) 001aac399 0 s21 2 (dB) −10 001aac398 s21 2 (dB) (3) (4) −0.5 −20 −30 −1 0 1000 2000 f (MHz) 3000 −40 0 1000 2000 f (MHz) 3000 Tamb = 25 °C (1) IF = 100 mA (2) IF = 10 mA (3) IF = 1 mA (4) IF = 0.5 mA Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network Tamb = 25 °C Diode zero biased and inserted in series with a 50 Ω stripline circuit Fig 3. Insertion loss (|s21|2) of the diode as a function of frequency; typical values Fig 4. Isolation (|s21|2) of the diode as a function of frequency; typical values 9397 750 14554 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 March 2005 4 of 8 Philips Semiconductors www.DataSheet4U.com BAP51L Silicon PIN diode 8. Package outline Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882 L L 1 2 b e1 A A1 E D (2) 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e1 0.65 L 0.30 0.22 0.5 scale 1 mm Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION SOD882 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17 Fig 5. Package outline SOD882 9397 750 14554 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 March 2005 5 of 8 Philips Semiconductors www.DataSheet4U.com BAP51L Silicon PIN diode 9. Revision history Table 7: BAP51L_1 Revision history Rele.


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