JDP2S01S

JDP2S01S TOSHIBA Diode Silicon Epitaxial PIN Type www.DataSheet4U.com JDP2S01S UHF~VHF Band RF Attenuator Applications Unit: mm · · · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 0.65Ω(typ.) Low capacitance: CT = 0.65 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 150 −55~150 Unit V mA °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 µA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Weight: 0.0011 g Min 30 ¾ ¾ ¾ ¾ Typ. ¾ ¾ 0.86 0.65 0.65 Max ¾ 0.1 0.92 0.8 1 Unit V µA V pF Ω Note: Signal level when capacitance is measured. Vsig = 20 mVrms Marking 1 1 2001-12-05 JDP2S01S www.DataSheet4U.com CT – VR 5 3 f = 1 MHz Ta = 25°C Vsig = 20 mVrms 100 500 rs – IF Ta = 25°C Tester: HP4291A f = 0.1 GHz (pF) (9) 0.5 1.0 Capacitance CT Series resistance rs 1 0.5 0.3 1.5 10 1.5 1.0 0.5 0.1 0.1 0.3 1 3 10 1 0.5 0.01 f = 0.1 GHz 0.1 1 10 Reverse voltage VR (V) Forward current IF (mA) 2 2001-12-05 JDP2S01S www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheles...