JDP2S01E

JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type www.DataSheet4U.com JDP2S01E UHF~VHF Band RF Attenuator Applications Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 0.65 Ω (typ.) Low capacitance: CT = 0.65 pF (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 125 −55~125 Unit V mA °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1G1A Weight: 0.0014 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs IR = 10 μA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Test Condition Min 30 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ 0.9 0.65 0.65 Max ⎯ 0.1 0.95 0.8 1.0 Unit V μA V pF ...