VCO
JDV2S10FS
TOSHIBA Diode Silicon Epitaxial Planar Type
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JDV2S10FS
VCO for the UHF band
• • • High cap...
Description
JDV2S10FS
TOSHIBA Diode Silicon Epitaxial Planar Type
www.DataSheet4U.com
JDV2S10FS
VCO for the UHF band
High capacitance ratio: C0.5V/C2.5V =2.55 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
カソードマーク
Unit: mm
0.6±0.05 0.1 0.8±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
0.07
M
0.1
A
0.2 ±0.05
0.1±0.05
0.48 +0.02 -0.03
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC JEITA TOSHIBA
― ― 1-1L1A
Weight: 0.0006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C0.5V C2.5V C0.5V/C2.5V rs IR = 1 μA VR = 10 V VR = 0.5 V, f = 1 MHz VR = 2.5 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Test Condition Min 10 ⎯ 7.3 2.75 2.4 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 2...
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