16-Mbit Flash 8-Mbit PSRAM Stack Memory
Features
• 16-Mbit (x16) Flash and 8-Mbit PSRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power
– 27 mA Operating...
Description
Features
16-Mbit (x16) Flash and 8-Mbit PSRAM 2.7V to 3.3V Operating Voltage Low Operating Power
– 27 mA Operating Current – 53 µA Standby Current Extended Temperature Range
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Flash
2.7V to 3.3V Read/Write Access Time – 70 ns Sector Erase Architecture
– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time – 12 µs Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 12 mA Active – 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support Top/Bottom Boot Block Configuration 128-bit Protection Register Minimum 100,000 Erase Cycles
16-Mbit Flash + 8-Mbit PSRAM Stack Memory AT52BC1661A AT52BC1661AT Preliminary
PSRAM
8-Mbit (512K x 16) 2.7V to 3.3V VCC Operating Voltage 70 ns Access Time Fully Static Operation and Tri-state Output ISB0 < 10 µA when Deep Power-Down Device Number AT52BC1661A(T) Flash Configuration
16M (1M x 16)
PSRAM Configuration 8M (512K x 16)
Rev. 3455A–STKD–11/04
1
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CBGA Top View
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A
NC NC NC A11 A15 A14 A13 A12 GND NC N...
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