HAT2282C

HAT2282C Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.1.00 Jan 26, 2006 23 45 DD DD 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - Drain diode reverse Drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6mm) Ratings 60 ±12 1.5 6 1.5 830 150 –55 to +150 (Ta = 25°C) Unit V V A A A mW °C °C Rev.1.00 Jan 26, 2006 page 1 of 6 HAT2282C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to Source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to Source breakdown voltage V(BR)GSS ±12 IG = ±100 µA, VDS = 0 Gate to Source leak current IGSS — — ±10 µA VGS = ±10 V, VDS = 0 Drain to Source leak current IDSS — — 1 µA VDS = 60 V, VGS = 0 Gate to Source cutoff voltage VGS(off) 0.4 — 1.4 V VDS = 10 V, ID = 1 mA Drain to Source on state resistance RDS(on) — 173 225 mΩ ID = 0.8 A, VGS = 4.5 VNote3 RDS(on) — 207 290 mΩ ID = 0.8 A, ...