HAT2279N

www.DataSheet4U.com HAT2279N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.2.00 Jul.05.2005 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS = 10 V) Lead Free Outline LFPAK-i 5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 2X XX 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.2.00, Jul.05.2005, page 1 of 4 www.DataSheet4U.com HAT2279N Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 Note 2 Note3 Note1 Ratings 80 ±20 30 120 30 25 83 25 5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C EAR Pch θch-C Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.2.00, Jul.05.2005, page 2 of 4 www.DataSheet4U.com HAT2279N Electrical Characteristics (Ta = 25°C) Item Symbol Min 80 — — 0.8 — — 42 — — — — — — — — — — — — — Typ — — — — 9.8 11.3 70 3520 410 160 0.5 60 9.5 9.0 9.5 14.5 56 9.5 0.83 50 Max — ± 0.5 1 2.3 12.3 15.3 — — — — — — — — — — — — 1.08 — Unit V µA µA V mΩ mΩ S pF pF pF Ω nc nc nc ns ns ns ns V ns VDD = 25 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A VDD ≅ 30 V RL = 2 Ω Rg = 4.7 Ω IF = ...