HAT2218R

www.DataSheet4U.com HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0396-0300 Rev.3.00 Aug.23.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline SOP-8 7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6 3 1 2 4 S1/D2(kelvin) 1 S2 3 MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR MOS1 30 ±20 7.5 60 7.5 MOS2 & SBD 30 ±12 8.0 64 8.0 Unit V V A A A W Channel dissipation Pch Note2 1.5 1.5 Channel temperature Tch 150 150 Storage temperature Tstg –55 to +150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s °C °C Rev.3.00, Aug.23.2004, page 1 of 9 HAT2218R Electrical Characteristics MOS1 www.DataSheet4U.com (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 3...