Silicon N-Channel Power MOSFET
HAT2215R
Silicon N Channel Power MOSFET High Speed Power Switching
Features
Low on-resistance Capable of 4.5 V gate...
Description
HAT2215R
Silicon N Channel Power MOSFET High Speed Power Switching
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
8 7 65 1 234
78 DD
56 DD
2
4
G
G
S1
MOS1
S3
MOS2
Data Sheet
REJ03G0486-0301 Rev.3.01
Jan 20, 2017
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
80
Gate to source voltage
VGSS
20
Drain current
ID
3.4
Drain peak current
ID(pulse)Note1
20.4
Reverse drain current
IDR
3.4
Channel dissipation
Pch Note2
1.5
Channel dissipation
Pch Note3
2.2
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit V V A A A W W
C C
REJ03G0486-0301 Rev.3.01 Jan 20, 2017
Page 1 of 7
HAT2215R
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fal...
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