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HAT2208R

Renesas Technology
Part Number HAT2208R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description HAT2208R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive ...
Datasheet PDF File HAT2208R PDF File

HAT2208R
HAT2208R

Overview
HAT2208R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 19.
0 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1595-0201 Rev.
2.
01 Nov.
25.
2016 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance VDSS VGSS ID ID(pulse)...


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