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HAT2201R Dataheets PDF



Part Number HAT2201R
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel Power MOSFET
Datasheet HAT2201R DatasheetHAT2201R Datasheet (PDF)

HAT2201R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0233-0301Z Rev.3.01 Nov.30.2016 Rev.3.01, Nov.30.2016, page 1 of 7 HAT2201R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±2.

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HAT2201R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0233-0301Z Rev.3.01 Nov.30.2016 Rev.3.01, Nov.30.2016, page 1 of 7 HAT2201R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 6 ID(pulse)Note1 48 Body-drain diode reverse drain current IDR 6 Avalanche current IAP Note 2 6 Avalanche energy EAR Note 2 3.6 Channel dissipation Pch Note3 2.5 Channel to Ambient Thermal Impedance θch-a Note3 50 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Unit V V A A A A mJ W °C/W °C °C (Ta = 25°C) Electrical Characteristics Item Symbol Min Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss 100 — — 3.5 — — 6 — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body–drain diode forward voltage VDF — Body–drain diode reverse recovery time trr — Notes: 4. Pulse test Typ Max Unit — — V — ± 0.1 µA — 1 µA — 5.0 V 34 43 mΩ 35 49 mΩ 10 — S 1450 — pF 180 — pF 65 — pF 0.9 — Ω 21 — nC 7.6 — nC 5.2 — nC 18 — ns 2.5 — ns 36 — ns 4.0 — ns 0.79 1.03 V 40 — ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 3 A, VGS = 10 V Note4 ID = 3 A, VGS = 8 V Note4 ID = 3 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 6 A VGS = 10 V, ID = 3 A VDD ≅ 30 V RL = 10 Ω Rg = 4.7 Ω IF = 6 A, VGS = 0 Note4 IF = 6 A, VGS = 0 diF/ dt = 100 A/ µs Rev.3.01, Nov.30.2016, page 2 of 7 Channel Dissipation Pch (W) HAT2201R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 2.0 1.0 0 50 100 150 200 Ambient Temperature Ta (°C) Drain Current ID (A) Typical Output Characteristics 20 10 V 7V 6.2 V 16 12 5.8 V 8 4 VGS = 5.5 V Pulse Test 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 500 Pulse Test 400 300 200 ID = 5 A 100 2A 1A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS(on) (mV) Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) Maximum Safe Operation Area 100 10 µs 10 1 Operation in this area is 0.1 limited by RDS(on) 0.01 DC Operation (PW £ 10 s)Note 5 100 µs 1 ms PW = 10 ms Ta = 25°C 0.001 1 shot Pulse 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics 20 VDS = 10 V Pulse Test 16 Drain Current ID (A) 12 Tc = 75°C 8 25°C 4 –25°C 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 VGS = 8 V 10 V 20 10 1 10 100 Drain Current ID (A) Rev.3.01, Nov.30.2016, page 3 of 7 HAT2201R Static Drain to Source on State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test 80 1 A, 2 A, 5 A 60 40 VGS = 8 V 20 10 V ID = 1 A, 2 A, 5 A 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Body–Drain Diode Reverse Recovery Time 100 50 Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) 20 di/dt = 100 A/µs 10 0.1 VGS = 0, Ta = 25°C 1 10 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics 250 20 ID = 6 A 200 VDS = 100 V 50 V 25 V 150 VGS 16 12 VDS 100 8 50 VDS = 100 V 4 50 V 25 V 0 0 8 16 24 32 40 Gate Charge Qg (nC) Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 100 Tc = –25°C 10 25°C 1 75°C 0.1 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current ID (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 Ciss 1000 300 Coss 100 Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 1000 Switching Charact.


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