Document
HAT2201R
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 34 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8 DD D D
1 234
4 G
SSS 12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
REJ03G0233-0301Z Rev.3.01
Nov.30.2016
Rev.3.01, Nov.30.2016, page 1 of 7
HAT2201R
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
100
Gate to source voltage
VGSS
±20
Drain current Drain peak current
ID
6
ID(pulse)Note1
48
Body-drain diode reverse drain current
IDR
6
Avalanche current
IAP Note 2
6
Avalanche energy
EAR Note 2
3.6
Channel dissipation
Pch Note3
2.5
Channel to Ambient Thermal Impedance
θch-a Note3
50
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Unit
V V A A A A mJ W °C/W °C °C
(Ta = 25°C)
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance
V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss
100 — — 3.5 — — 6 —
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery time trr
—
Notes: 4. Pulse test
Typ
Max
Unit
—
—
V
—
± 0.1 µA
—
1
µA
—
5.0
V
34
43
mΩ
35
49
mΩ
10
—
S
1450 —
pF
180
—
pF
65
—
pF
0.9
—
Ω
21
—
nC
7.6
—
nC
5.2
—
nC
18
—
ns
2.5
—
ns
36
—
ns
4.0
—
ns
0.79 1.03 V
40
—
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 3 A, VGS = 10 V Note4 ID = 3 A, VGS = 8 V Note4 ID = 3 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz
VDD = 50 V VGS = 10 V ID = 6 A VGS = 10 V, ID = 3 A VDD ≅ 30 V RL = 10 Ω Rg = 4.7 Ω IF = 6 A, VGS = 0 Note4 IF = 6 A, VGS = 0 diF/ dt = 100 A/ µs
Rev.3.01, Nov.30.2016, page 2 of 7
Channel Dissipation Pch (W)
HAT2201R
Main Characteristics
Power vs. Temperature Derating 4.0
Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100 150
200
Ambient Temperature Ta (°C)
Drain Current ID (A)
Typical Output Characteristics
20 10 V
7V
6.2 V
16
12 5.8 V
8
4
VGS = 5.5 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
500 Pulse Test
400
300
200
ID = 5 A
100
2A
1A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS(on) (mV)
Drain to Source On State Resistance RDS(on) (mΩ)
Drain Current ID (A)
Maximum Safe Operation Area 100
10 µs 10
1 Operation in this area is
0.1 limited by RDS(on)
0.01
DC Operation (PW £ 10 s)Note 5
100 µs
1 ms PW = 10 ms
Ta = 25°C 0.001 1 shot Pulse
0.1 0.3 1 3
10 30 100 300 1000
Drain to Source Voltage VDS (V)
Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Transfer Characteristics 20
VDS = 10 V
Pulse Test 16
Drain Current ID (A)
12
Tc = 75°C 8
25°C 4
–25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test
50 VGS = 8 V 10 V
20
10
1
10
100
Drain Current ID (A)
Rev.3.01, Nov.30.2016, page 3 of 7
HAT2201R
Static Drain to Source on State Resistance RDS(on) (mΩ)
Static Drain to Source on State Resistance vs. Temperature
100 Pulse Test
80
1 A, 2 A, 5 A
60
40 VGS = 8 V
20
10 V
ID = 1 A, 2 A, 5 A
0 -25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body–Drain Diode Reverse Recovery Time
100
50
Reverse Recovery Time trr (ns)
Drain to Source Voltage VDS (V)
20
di/dt = 100 A/µs
10 0.1
VGS = 0, Ta = 25°C
1
10
100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
250
20
ID = 6 A
200
VDS = 100 V
50 V
25 V
150
VGS 16 12
VDS
100
8
50
VDS = 100 V
4
50 V
25 V
0
0
8
16 24 32 40
Gate Charge Qg (nC)
Gate to Source Voltage VGS (V) Switching Time t (ns)
Capacitance C (pF)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs. Drain Current
100
Tc = –25°C
10
25°C
1 75°C
0.1 0.1
VDS = 10 V Pulse Test
0.3 1 3 10 30 100 Drain Current ID (A)
10000
Typical Capacitance vs. Drain to Source Voltage
3000 Ciss
1000
300
Coss 100
Crss
30 VGS = 0
f = 1 MHz 10
0
10
20 30 40 50
Drain to Source Voltage VDS (V)
1000
Switching Charact.