HAT2201WP
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 34 m typ. (at VGS = 10 V)
Outline
Preliminary Datasheet
REJ03G1679-0310 Rev.3.10
May 21, 2010
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 678
5 678 D DDD
4
4 32 1
G
1, 2...