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HAT2201WP

Renesas Technology

Silicon N-Channel Power MOSFET


Description
HAT2201WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline Preliminary Datasheet REJ03G1679-0310 Rev.3.10 May 21, 2010 RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1 G 1, 2...



Renesas Technology

HAT2201WP

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