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SMP11 Dataheets PDF



Part Number SMP11
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description (SMPxx) Transient Voltage Suppressors
Datasheet SMP11 DatasheetSMP11 Datasheet (PDF)

New Product SMP11 thru SMP36A www.DataSheet4U.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Available in uni-directional • 400 W peak pulse power capability with a 10/1000 µs waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance DO-220AA (SMP) eSMP TM Series • Meets MSL level 1, per J-STD-020 • Solder dip 260 °C, 40.

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New Product SMP11 thru SMP36A www.DataSheet4U.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Available in uni-directional • 400 W peak pulse power capability with a 10/1000 µs waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance DO-220AA (SMP) eSMP TM Series • Meets MSL level 1, per J-STD-020 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS VWM PPPM IFSM TJ max. 11 V to 36 V 400 W 40 A 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform Peak pulse current with a 10/1000 µs waveform (1) (2) (1)(2) SYMBOL (Fig. 1) PPPM IPPM IFSM VF TJ, TSTG VALUE 400 See table next page 40 2.5 - 55 to + 150 UNIT W A A V °C Peak forward surge current 10 ms single half sine-wave Maximum instantaneous forward voltage at 25 A (3) Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal (3) Pulse test: 300 µs pulse width, 1 % duty cycle Document Number: 88481 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product SMP11 thru SMP36A Vishay General Semiconductor www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE MARKING CODE AY AZ BD BE BF BG BH BK BL BM BN BP BQ BR BS BT BU BV BW BX BY BZ CD CE CF CG CH CK CL CM CN CP BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. SMP11 SMP11A SMP12 SMP12A SMP13 SMP13A SMP14 SMP14A SMP15 SMP15A SMP16 SMP16A SMP17 SMP17A SMP18 SMP18A SMP20 SMP20A SMP22 SMP22A SMP24 SMP24A SMP26 SMP26A SMP28 SMP28A SMP30 SMP30A SMP33 SMP33A SMP36 SMP36A Notes: (1) VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 MAX. 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 36 36 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) (3) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) 19.9 22.0 18.2 20.1 16.8 18.6 15.5 17.2 14.9 16.4 13.9 15.4 13.1 14.5 12.4 13.7 11.2 12.3 10.2 11.3 9.3 10.3 8.6 9.5 8.0 8.8 7.5 8.3 6.8 7.5 6.2 6.9 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 64.3 58.1 DEVICE TYPE ORDERING INFORMATION (Example) PREFERRED P/N SMP11A-E3/84A SMP11A-E3/85A UNIT WEIGHT (g) 0.024 0.024 PREFERRED PACKAGE CODE 84A 85A BASE QUANTITY 3000 10 000 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88481 Revision: 20-Oct-08 New Product SMP11 thru SMP36A www.DataSheet4U.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 150 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C tr = 10 µs Peak Value IPPM TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM 100 1 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs td 0 0 1.0 2.0 3.0 4.0 1.0 µs.


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