K4S56323LF-FE

K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES VDD/VDDQ = 2.5V/2.5V LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) DQM for masking. Auto refresh. 64ms refresh period (4K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free). Mobile-SDRAM www.DataSheet4U.com GENERAL DESCRIPTION The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S56323LF-F(H)E/N/S/C/L/R60 K4S56323LF-F(H)E/N/S/C/L/R75 K4S56323LF-F(H)E/N/S/C/L/R1H...