SUM110P06-08L

SUM110P06-08L New Product Vishay Siliconix www.DataSheet4U.com P-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) −60 FEATURES ID (A)d D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance D 100% Rg Tested rDS(on) (W) 0.008 @ VGS = −10 V 0.0105 @ VGS = −4.5 V −110 −110 APPLICATIONS D Automotive Such As − High-Side Switch − Motor Drives − 12-V Boardnet S TO-263 G G D S Top View D Ordering Information: SUM110P06-08L SUM110P06-08L—E3 (Lead (Pb)-Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentd (TJ = 175_C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energya L = 0.1 0 1 mH TC = 25_C TA = 25_Cb TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit −60 "20 −110 −75 −200 −65 211 272c 3.75b −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountb Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. Document Number: 73045 S-41506—Rev. A, 09-Aug-04 www.vishay.com Symbol RthJA RthJC Limit 40 0.55 Unit _C/W 1 SUM110P06-08L Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bo...