SUM110P04-04L

SUM110P04-04L Vishay Siliconix www.DataSheet4U.com P-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) −40 FEATURES ID (A)d D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance rDS(on) (W) 0.0042 @ VGS = −10 V 0.0062 @ VGS = −4.5 V −110 −110 APPLICATIONS D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives S TO-263 G G D S Top View D Ordering Information: SUM110P04-04L P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentd (TJ = 175_C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energya L = 0.1 0 1 mH TC = 25_C TA = 25_Cb TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit −40 "20 −110 −110 −240 −75 281 375c 3.75 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountb Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. Document Number: 72437 S-40840—Rev. B, 03-May-04 www.vishay.com Symbol RthJA RthJC Limit 40 0.4 Unit _C/W 1 SUM110P04-04L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = −250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V ...