SI7463DP

Si7463DP Vishay Siliconix www.DataSheet4U.com P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −40 FEATURES ID (A) −18.6 −15 rDS(on) (W) 0.0092 @ VGS = −10 V 0.014 @ VGS = −4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives S PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm G 4 D 8 7 D 6 D 5 D G D P-Channel MOSFET Bottom View Ordering Information: Si7463DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −40 "20 Unit V −18.6 −15 −60 −4.5 5.4 3.4 −55 to 150 −11 −8.9 A −1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72440 S-32411—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W 1 Si7463DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State ...