PMG370XN

www.DataSheet4U.com PMG370XN N-channel µTrenchMOS™ extremely low level FET MBD128 Rev. 01 — 13 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 0.69 W s ID ≤ 0.96 A s RDSon ≤ 440 mΩ. 2. Pinning information Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description drain (d) drain (d) gate (g) source (s) drain (d) MBB076 Simplified outline 6 5 4 Symbol d g s drain (d) 1 Top view 2 3 MSA370 SOT363 (SC-88) Philips Semiconductors PMG370XN www.DataSheet4U.com N-channel µTrenchMOS™ extremely low level FET 3. Ordering information Table 2: Ordering information Package Name PMG370XN SC-88 Description Plastic surface mounted package; 6 leads Version SOT363 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) cur...